dim800ddm12 - a000 dual sw itch igbt module replaces ds5528 - 3.0 ds5528 - 4 october 2009 (ln26748) caution: this devi ce is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? high thermal cycling capability ? non punch through silicon ? isolated alsic base with aln substrates ? lead free construction applications ? high reliability inverters ? motor controllers ? traction drives the powerline ran ge of high power modules includes half bridge, chopper, dual, single and bi - directional switch configurations covering voltages from 1200v to 6500v and currents up to 2400a. the dim 800ddm12 - a000 is a dual switch 1 2 00v, n - channel enhancement mode, insulate d gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high thermal cycling capability. the mod ule incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 800ddm12 - a000 note: when ordering , please use the complete part number key parameters v ces 12 00v v ce(sat) * (typ) 2.2 v i c (max) 80 0a i c(pk) (max) 16 00a * measured at the power busbars, not the auxiliary terminals fig. 1 circuit configuration outline type code: d ( see fig. 11 for further information) fig. 2 package 4 x m8 sc re w ing depth m ax 16 sc re w ing depth m ax 8 6 x m4 6 x o 7 7 ( c ) 1(e) 3( c ) 5 ( e ) 5 ( e ) 6 ( g ) 10 ( e ) 2( c ) 4(e) 12 ( c ) 11 ( g ) 130 0. 5 114 0.1 57 0.2 5 57 0.2 5 124 0. 25 140 0. 5 30 0.2 16 0.2 18 0.2 44 0.2 57 0.2 53 0.2 40 0.2 5 0. 2 29.2 0.5 5.25 0. 3 35 0.2 11.5 0.2 14 0.2 55.2 0. 3 11.85 0.2 38 +1.5 -0.0 28 0.5 20 0.1
dim 800ddm12 - a000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include pote ntially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v ce s collector - emitter voltage v ge = 0v 12 00 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 85 c 8 00 a i c(pk) peak collector current 1ms, t case = 115 c 16 00 a p max max. transistor power dissipation t case = 25 c , t j = 150 c 6940 w i 2 t diode i 2 t value v r = 0, t p = 10ms, t j = 125oc 100 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 2500 v q pd partial discharge C per module iec1287, v 1 = 13 00v, v 2 = 10 00v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 20 mm clearance: 10 mm cti (comparative tracking index): 350 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance C th(j - c) thermal resistance C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 125 c t stg storage temperature range - - 40 - 125 c screw torque mounting C C C
dim 800ddm12 - a000 caution: this devi ce is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 1 ma v ge = 0v, v ce = v ces , t case = 125 c 2 5 ma i g es gate leakage current v ge = 20v, v ce = 0v 4 a v ge(th) gate threshold voltage i c = 4 0ma, v ge = v ce 4.5 5.5 6.5 v v ce(sat) ? collector - e mitter saturation voltage v ge = 15v, i c = 8 00a 2. 2 2.8 v v ge = 15v, i c = 8 00a, t j = 125 c 2.6 3.2 v i f diode forward current dc 800 a i fm diode maximum forward current t p = 1ms 1600 a v f ? diode forward voltage i f = 8 00a 2.1 2.4 v i f = 8 00a, t j = 125 c 2.1 2.4 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 90 nf q g gate charge 1 5v 9 c c res reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1mhz nf l m module inductance C per switch 20 nh r int internal transistor resistance C per switch 270 ? sc data short circuit current, i sc t j = 125 c , v cc = 9 00v t p 10s, v ge 15 v v ce (max) = v ces C l * x di/dt iec 60747 - 9 i 1 5500 a i 2 4500 a note: ? me asured at the power busbars, not the auxiliary terminals * l is the circuit inductance + l m
dim 800ddm12 - a000 4 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol p arameter test conditions min typ. max units t d(off) turn - off delay time i c = 8 00a v ge = 15v v ce = 6 00v r g(on) = 2.7 ? r g(off) = 2.7 ? l s ~ 10 0nh 1250 n s t f fall time 170 ns e off turn - off energy loss 1 30 mj t d(on) turn - on delay time 250 ns t r rise time 250 ns e on turn - on energy loss 80 mj q rr diode reverse recovery charge i f = 8 00a v ce = 6 00v di f /dt = 42 00a/s 80 c i rr diode reverse recovery current 380 a e rec diode reverse recovery energy 30 mj t case = 125c unless state d otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 800a v ge = 15v v ce = 600v r g(on) = 2.7 ? r g(off) = 2.7 ? l s ~ 100nh 1500 n s t f fall time 200 ns e off turn - off energy loss 1 60 mj t d(on) turn - on del ay time 400 ns t r rise time 220 ns e on turn - on energy loss 120 mj q rr diode reverse recovery charge i f = 800a v ce = 6 00v di f /dt = 4000a/s 160 c i rr diode reverse recovery current 450 a e rec diode reverse recovery energy 60 mj
dim 800ddm12 - a000 caution: this devi ce is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance
dim 800ddm12 - a000 6 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal im pedance
dim 800ddm12 - a000 caution: this devi ce is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 900g module outline type code: d fig. 11 module outline drawing 4 x m8 screwing depth max 16 screwing depth max 8 6 x m4 130 0.5 124 0.25 30 0.2 16 0.2 18 0.2 29.2 0.5 5.25 0.3 14 0.2 5 0.2 57 0.25 57 0.25 114 0.1 40 0.2 44 0.2 53 0.2 57 0.2 11.85 0.2 55.2 0.3 38 +1.5 -0.0 35 0.2 11.5 0.2 7 (c) 1(e) 3(c) 5 (e) 5 (e) 6 (g) 10 (e) 2(c) 4(e) 12 (c) 11 (g) 140 0.5 6 x ? 7
dim 800ddm12 - a000 8 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com headquarters operations customer service dynex semiconductor ltd doddington road, lincoln lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, lincoln lincolnshire, ln6 3lf, united kingdom fax: +44(0)152 2 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502901 / 502753 email: power_solutions@dynexsemi.com ? dynex semiconductor technical documentation C not for resa le. produced in united kingdom. datasheet annotations: dynex semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but may cha nge. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification. this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, appli ed or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee expressed or implied is made regarding the capability, performa nce or suitability of any product or service. the company reserves the right to alter without prior notice the specification, desi gn or price of any product or service. information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such metho ds of use will be satisfactory in a specific piece of equipment. it is the users responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and ha s not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the companys cond itions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their resp ective owners.
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